SOT-227B SOT-227 Package
The device is housed in a SOT-227B package with an isolation voltage of 3000VAC, meeting industry standard outlines and RoHS compliance. The epoxy meets UL 94V-0 standards, and the base plate is made of copper with internal DCB isolation, offering advanced power cycling capabilities. These features ensure excellent performance in various power control and conversion applications, guaranteeing efficient and reliable operation.
DSEI2x121-02A FRED Module
2x123A 200V
DSEI2x101-12A FRED Module
2x99A 1200V
DSEI2x30-06C FRED Module
2x30A 400V 600V 1000V 1200V
DSEI2x31-06C FRED module
2x30A 400V 600V 1000V 1200V
DSEI2x61-06C Fast Recovery Epitaxial Diode
2X60A 600V
Fast Recovery Epitaxial Diode DSEI2X61-12B
FRED 2x60A 1200V, more than 100Kpcs annual production
SOT-227 Fast Recovery Diode Module
60A 75A 100A 125A 1200V SOT-227 FRD Module
DSS2x61-0045A Schottky Diode
2x60A 45V
Power Schottky Rectifier DSS2x160-0045A
2x160A 45V
DSS2x41-01A Schottky Diode
100V 2x40A
DSS2x101-02A Schottky Diode
200v 2x100A
DSS2x101-015A Schottky Diode
150V 2x100A
DSS 2x160-01A Power Schottky Rectifier
2x160A 100V
DSS2x61-01A Schottky Diode
100V 2x60A
DSS2x111-008A Schottky Diode
80V 2x110A
DSS2x121-0045B Schottky Diode
45V 2x120A
DSS2x81-0045B Schottky Diode
45V 2x80A
CASBD2X41-17F Silicon Carbide Schottky Diode
80A 1700V
CASBD2X41-17 Silicon Carbide Schottky Diode
80A 1700V
CASBD2X91-12-CASBD2X90-12 Dual Silicon Carbide Schottky Barrier Diode
CASBD2X91-12/CASBD2X90-12
CASBD2X61-17-CASBD2X60-17 Dual Silicon Carbide Schottky Barrier Diode
CASBD2X61-17/CASBD2X60-17
CASBD2X101-12-CASBD2X100-12 Dual Silicon Carbide Schottky Barrier Diode
CASBD2X101-12/CASBD2X100-12
FN100N20 Mosfet Power Module
100A 200V
FN60N80 Silicon N-channel Enhanced MOSFET
40A/60A 800V
LFN100N50AFD Silicon N-Channel Power MOSFET Integrated FRD
90A 500V
FN82n60P Silicon N-Channel Power MOSFET
80A 600V
FN400N15A Silicon N-Channel Power MOSFET
400A 150V
CAFN50N120A Silicon N-Channel Power MOSFET
50A 1200V
CA15mR120S SiC N-MOSFET
125A 1200V
CA60MR50P Silicon N-Channel Power MOSFET Integrated FRD
90A 500V
CAFN230N20 Silicon N-Channel Power MOSFET
210A 200V
CAFN38N100A Silicon N-Channel Power MOSFET
38A 1000V
MOS420N10P Mosfet Module
420A 100V
MOS280N080 MOS Module
280A 80V
100V 200A Mosfet Module - MOS200N10P
100V 200A
The SOT-227 package is commonly used for high-power semiconductor devices such as power MOSFETs, IGBTs, Schottky Diode rectifier diodes, thyristors, and FRED modules. It is suitable for applications requiring efficient power conversion and heat dissipation, and is widely used in industrial power supplies, renewable energy systems (such as solar inverters), and electric vehicle chargers. Its design supports high current and high voltage operation, ensuring reliable performance in demanding environments.
The main difference between SOT-227 and SOT-227B packages lies in their physical dimensions and pin configurations. SOT-227B is typically a variant of SOT-227 and may have slight differences in design, such as pin spacing or package height. These differences can affect how they are mounted on circuit boards or their compatibility with other components. Therefore, when choosing which package to use, it is important to decide based on specific application requirements and circuit board design.