Symbol	Parameter	Test Cobditions	Value	Units
V_DS_S	Drain-to-Source Voltage	TJ = 25°C TJ =150°C	100	V
V_G_S_S	Gate-to-Source Voltage		±20	V
I_D	Continuous Drain Current	T_C=25℃	420	A
I_DM	Pulsed Drain Current	T_C=25℃	1000	A
E_AS	Single Pulse Avalanche Energy	T_C=25℃	4.2	J
P_D	Maximum Power Dissipation ( T_C=25℃)		1100	W
T_J	Operating Junction Temperature Range		-55 to 150	℃
T_STG	Storage Temperature Range		-55 to 150	℃
Visol	Isolation Breakdown Voltage	AC,50Hz,RMS,t=1min	2500	V
Torque	Module to Sink	M4	1.0-1.5	Nm
Torque	Module Electrodes	M4	1.0-1.5	Nm
Weight			30	g
R_thjc	Junction to Case Thermal Resistance		0.13	℃/w
R_thCK	Case-to-Heat sink Thermal Resistance		0.05	℃/w

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
BV_DSS	Drain-to-Source Breakdown Voltage	V_G_S= 0V, I_D= 250uA	100	-	-	V
I_DS_S	Drain-to-Source Leakage Current	V_DS= 100V, V_GS= 0V	-	-	5	uA
I_G_S_S	Gate-to-Source Leakage Current	V_G_S=20V, V_DS= 0V	-	-	100	nA
		V_G_S= -20V, V_DS= 0V	-	-	-100	nA
V_G_S_(th)	Gate Threshold Voltage	V_G_S= V_DS, I_D= 250uA	2.0	-	4.0	V
V_RD₍_ON₎	Static Drain-to-Source On-Resistance	V_G_S=10V, I_C=200A	-	-	3.5	mΩ
gfs	Forward Transconductance	V_DS=15V,I_D=100A		90		S
Qg	Total Gate Charge	V_DD=50V, I_D=100A, V_GS=10V	-	242		nC
Qgs	Gate-to-Source Charge		-	60		nC
Qgd	Gate-to-Drain (Miller) Charge		-	135		nC
t _d(on)	Turn-on Delay Time	V_DD=50V, I_D=60A, V_GS=10V Rg=3.3Ω	-	50	-	ns
t _r	Turn-on Rise Time		-	100	-	ns
t _d(off)	Turn-off Delay Time		-	110	-	ns
t _f	Turn-off Fall Time		-	230	-	ns
Ciss	Input Capacitance	V_GS=0V, V_DS=25V, f=1.0MHZ	-	50	-	nF
Coss	Output Capacitance		-	4200	-	pF
Crss	Reverse Transfer Capacitance		-	600	-	pF

MOS420N10P Mosfet Module

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