Product details

Silicon N-Channel Power MOSFET

The silicon N-channel Enhanced VDMOSFET is manufactured using self-aligned planar technology, which reduces conduction loss, improves switching performance, and enhances avalanche energy. This transistor can be used in various power switching circuits for system miniaturization and higher efficiency. The package form is SOT-227B, which complies with the RoHS standard.

Features
ESD Improved Capability
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test

Applications
Power switch circuit of POWER

Specification

Type	V_RRM	ID(cont)Chip Tc=25℃ A	RDS(on) Tc=25℃ Ω	Ciss typ A	Qg typ nC	t_rr typ ns	R_thJC K/W	PD W	Fig. No.
GRFN 40N90P	900	33	0.21	14000	230	300	0.18	695	SOT-227B
GRFN 52N90P	900	43	0.16	19000	308	300	0.14	890	SOT-227B
GRFN 56N90P	900	56	0.145	23000	375	300	0.125	1000	SOT-227B
GRFN 26N100P	1000	23	0.39	11900	197	300	0.21	595	SOT-227B
GRFN 32N100P	1000	27	0.32	14200	225	300	0.18	690	SOT-227B
GRFN 44N100P	1000	37	0.22	19000	305	300	0.14	890	SOT-227B
GRFN 38N100P	1000	38	0.21	24000	350	300	0.125	1000	SOT-227B
GRFN 40N110P	1100	34	0.26	19000	310	300	0.14	890	SOT-227B
GRFN 20N120P	1200	20	0.57	11100	193	300	0.21	595	SOT-227B
GRFN 26N120P	1200	23	0.46	14000	225	300	0.18	695	SOT-227B
GRFN 30N120P	1200	30	0.35	19000	310	300	0.14	890	SOT-227B
GRFN 32N120P	1200	32	0.31	21000	360	300	0.125	1000	SOT-227B