Single IGBT switch
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Single IGBT switch
TYPE |
Collector Emmiter Voltage |
CD collect current |
Gate
emitter
voltage
|
Power dissipation
Tc=25℃
|
Diode junction case
MAX |
Collector- emitter saturation voltage |
Gate-emitter
threshold
voltage
|
Diode forward voltage |
VCE |
Ic |
VGE |
Ptot |
Rthjc |
VCEsat |
VGE(th) |
VF |
|
(V) |
(A) |
(V) |
(W) |
(℃/W) |
(V) |
(V) |
(V) |
|
W40N120F1D |
1200 |
40 |
±20 |
350 |
0.42 |
1.75 |
4.8-6.8 |
3.50 |
W40N120F2D |
1200 |
40 |
±20 |
350 |
0.42 |
1.75 |
4.8-6.8 |
3.50 |
W60N065F1D |
650 |
60 |
±30 |
450 |
0.27 |
1.90 |
4.0 -6.0 |
3.50 |
TYPE |
Collector Emmiter Voltage |
CD collect |
Gate- emitter |
Power dissipation Tc=25℃ |
Diode thermal resistance, case MAX |
Collector emitter saturation voltage |
Gate-emitter |
Diode forward voltage |
VCE |
Ic |
GE |
Ptot |
Rthjc |
VCEsat |
VGE(th) |
VF |
|
(V) |
(A) |
(V) |
(W) |
(℃/W) |
(V) |
(V) |
(V) |
|
H15N120F1 |
1200 |
15 |
±20 |
333 |
0.42 |
1.75 |
4.2 -6.2 |
1.05 |
H20N135F1 |
1350 |
20 |
±20 |
333 |
0.45 |
1.56 |
4.2 -6.2 |
1.05 |
H25N135F1 |
1350 |
25 |
±20 |
333 |
0.45 |
1.65 |
4.2 -6.2 |
1.15 |
W15N120F1 |
1200 |
15 |
±20 |
350 |
0.42 |
1.75 |
4.8 -6.8 |
1.65 |
W25N120F1 |
1200 |
25 |
±20 |
333 |
0.45 |
1.75 |
4.8 -6.8 |
1.65 |
W40N120F1 |
1200 |
40 |
±20 |
350 |
0.42 |
1.75 |
4.8 -6.8 |
3.50 |
W40N120F2 |
1200 |
40 |
±20 |
350 |
0.42 |
1.75 |
4.8 -6.8 |
3.50 |
W60N065F1 |
650 |
60 |
±30 |
450 |
0.27 |
1.90 |
4.0 -6.0 |
3.50 |
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