TYPE	Collector Emmiter Voltage	CD collect current	Gate emitter voltage	Power dissipation Tc=25℃	Diode thermal resistance, junction case MAX	Collector- emitter saturation voltage	Gate-emitter threshold voltage	Diode forward voltage
	VCE	Ic	VGE	Ptot	Rthjc	VCEsat	VGE(th)	VF
	(V)	(A)	(V)	(W)	(℃/W)	(V)	(V)	(V)
W40N120F1D	1200	40	±20	350	0.42	1.75	4.8-6.8	3.50
W40N120F2D	1200	40	±20	350	0.42	1.75	4.8-6.8	3.50
W60N065F1D	650	60	±30	450	0.27	1.90	4.0 -6.0	3.50

TYPE	Collector Emmiter Voltage	CD collect current	Gate- emitter voltage	Power dissipation Tc=25℃	Diode thermal resistance, junction case MAX	Collector emitter saturation voltage	Gate-emitter threshold voltage	Diode forward voltage
	VCE	Ic	GE	Ptot	Rthjc	VCEsat	VGE(th)	VF
	(V)	(A)	(V)	(W)	(℃/W)	(V)	(V)	(V)
H15N120F1	1200	15	±20	333	0.42	1.75	4.2 -6.2	1.05
H20N135F1	1350	20	±20	333	0.45	1.56	4.2 -6.2	1.05
H25N135F1	1350	25	±20	333	0.45	1.65	4.2 -6.2	1.15
W15N120F1	1200	15	±20	350	0.42	1.75	4.8 -6.8	1.65
W25N120F1	1200	25	±20	333	0.45	1.75	4.8 -6.8	1.65
W40N120F1	1200	40	±20	350	0.42	1.75	4.8 -6.8	3.50
W40N120F2	1200	40	±20	350	0.42	1.75	4.8 -6.8	3.50
W60N065F1	650	60	±30	450	0.27	1.90	4.0 -6.0	3.50

Single IGBT switch