Distributed Gate Thyristor Type R2619ZC18 to R2619ZC25

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Distributed Gate Thyristor Type R2619ZC18 to R2619ZC25
Distributed Gate Thyristor Type R2619ZC18 to R2619ZC25
Distributed Gate Thyristor Type R2619ZC18 to R2619ZC25
Distributed Gate Thyristor Type R2619ZC18 to R2619ZC25
Product Details

Distributed Gate Thyristor Type R2619ZC18 to R2619ZC25

2619A 1800V to 2500V phase control thyristor

 

  VOLTAGE RATINGS  MAXIMUM LIMITS                   UNITS 
VDRM  Repetitive peak off-state voltage, (note 1)  1800-2500 
VDSM  Non-repetitive peak off-state voltage, (note 1)  1800-2500 
VRRM  Repetitive peak reverse voltage, (note 1)  1800-2100 
VRSM  Non-repetitive peak reverse voltage, (note 1)  1900-2200 

 

  OTHER RATINGS  MAXIMUM LIMITS  UNITS 
IT(AV)M  Maximum average on-state current, Tsink=55°C, (note 2)  2619
IT(AV)M  Maximum average on-state current. Tsink=85°C, (note 2)  1792
IT(AV)M  Maximum average on-state current. Tsink=85°C, (note 3)  1037
IT(RMS)  Nominal RMS on-state current, Tsink=25°C, (note 2)  5227
IT(d.c.)  D.C. on-state current, Tsink=25°C, (note 4)  4395
ITSM  Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)  33.8 kA 
ITSM2  Peak non-repetitive surge tp=10ms, Vrm≤10V, (note 5)  37.2 kA 
I2t  I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)  5.71×106  A2s 
I2t  I2t capacity for fusing tp=10ms, Vrm≤10V, (note 5)  6.92×106  A2s 
(di/dt)cr 

Critical rate of rise of on-state current (repetitive), (Note 6)

Critical rate of rise of on-state current (non-repetitive), (Note 6) 

1000            

1500 

A/μs         

A/μs 

VRGM  Peak reverse gate voltage  5
PG(AV)  Mean forward gate power  5
PGM  Peak forward gate power  30
Tj op  Operating temperature range  -40 to 125  °C 
Tstg  Storage temperature range  -40 to 150  °C 

 

Fixed code: R2619ZC

Fixed voltage code (VDRM/100): 18, 20,25

Tq code: J=50us, K=60us, L=65us

For example: R2619ZC25K, 2619A, 2500V, 60us tq.

 

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