Part Numbers	Unit	T508N12TOF	T508N16TOF	T508N18TOF
Maximum Allowable Average Forward Current (Case Temperature) IT(AV) (TC)	A (85ºC)	510	510	510
Repetitive Pulsed Closed State Voltage; Repetitive Pulsed Reverse Voltage VDRM/VRRM	V	1200	1600	1800
RMS On-State Current ITRMSM	A	800	800	800
Surge On-State Current ITSM	kA	6.9	6.9	6.9
Safety Factor I²t	kA²·s	238	238	238
Threshold Voltage VT0	V	0.8	0.8	0.8
On-State Slope Resistance rT	mΩ	0.6	0.6	0.6
Critical Rate of Rise of On-State Current (diT/dt)cr	A/µs	120	120	120
Turn-Off Time, Max tq	µs	250	250	250
Critical Rate of Rise of Off-State Voltage, Min (dVD/dt)cr	V/µs	1000	1000	1000
Gate Trigger Direct Voltage, Max VGT	V	2	2	2
Gate Trigger Direct Current, Max IGT	mA	200	200	200
Temperature of P-N Junction Tvj Max	ºC	125	125	125
Thermal Resistance, Junction to Case Rth(j-c)	ºC/W	0.053	0.053	0.053
Dimensions ØD×Ød×H	mm	50x30x14	50x30x14	50x30x14

T508N Phase Control Thyristor Infineon

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