MOS420N10P Mosfet Module

Symbol

Parameter

Test Cobditions

Value

Units

V_DSS

Drain-to-Source Voltage

 TJ = 25°C

 TJ =150°C

100

V

V_GSS

Gate-to-Source Voltage 

±20

V

I_D

 Continuous Drain Current

T_C=25 ℃

420

A

I_DM

Pulsed Drain Current

T_C=25 ℃

1000

A

E_AS

Single Pulse Avalanche Energy

T_C=25 ℃

4.2

J

P_D

 Maximum Power Dissipation ( T_C=25 ℃)

1100

W

T_J

 Operating Junction Temperature Range

-55 to 150

℃

T_STG

 Storage Temperature Range

-55 to 150

℃

Visol

Isolation Breakdown Voltage

AC,50Hz,RMS,t=1min

2500

V

Torque

Module to Sink

M4

1.0-1.5

Nm

Module Electrodes

1.0-1.5

Nm

Weight

30

g

R_thjc

Junction to Case Thermal Resistance

0.13

℃/w

R_thCK

Case-to-Heat sink Thermal Resistance

0.05

℃/w

   Symbol

                          Parameter

    Test Conditions

Min.

Typ.

Max.

Units

BV_DSS

Drain-to-Source Breakdown Voltage

V_GS= 0V, I_D= 250uA

100

-

-

V

I_DSS

Drain-to-Source Leakage Current

V_DS= 100V, V_GS= 0V

-

-

5

uA

I_GSS

Gate-to-Source Leakage Current

V_GS=20V, V_DS= 0V

-

-

100

nA

V_GS= -20V, V_DS= 0V

-

-

-100

nA

V_GS(th)

Gate Threshold Voltage

V_GS= V_DS, I_D= 250uA

2.0

-

4.0

V

V_RD(ON)

Static Drain-to-Source On-Resistance

V_GS=10V, I_C=200A

-

-

3.5

mΩ

gfs

Forward Transconductance

V_DS=15V,I_D=100A

90

S

Qg

Total Gate Charge

V_DD=50V,

I_D=100A,

V_GS=10V

-

242

nC

Qgs

Gate-to-Source Charge

-

60

nC

Qgd

Gate-to-Drain (Miller) Charge

-

135

nC

t _d(on)

Turn-on Delay Time

V_DD=50V,

I_D=60A,

V_GS=10V

Rg=3.3Ω

-

50

-

ns

t _r

Turn-on Rise Time

-

100

-

ns

t _d(off)

Turn-off Delay Time

-

110

-

ns

t _f

Turn-off Fall Time

-

230

-

ns

Ciss

 Input Capacitance

V_GS=0V,

V_DS=25V,

f=1.0MHZ 

-

50

-

nF

Coss

Output Capacitance

-

4200

-

pF

Crss

Reverse Transfer Capacitance

-

600

-

pF

Symbol

                  Parameter

Test Conditions

Min.

Typ.

Max.

Units

ISD 

Continuous Source Current

420

A

I_SM 

Pulsed Source Current

1600

V_SD

Diode Forward Voltage

I_S=200A,V_GS = 0V

-

-

1.5

V

t _{r r}

Reverse Recovery Time

V_R = 50V

I_F= 25A,

di/dt=100A/μs

-

150

ns

I _RM

Diode peak Reverse Recovery Current

-

8

A

Q_{r r}

Reverse Recovery Charge

-

0.48

    uC