CAFN38N100A Silicon N-Channel Power MOSFET

1. Key Parameters:

   • Drain-to-Source Voltage (V_DSS): 1000V
   • Continuous Drain Current (I_D): 38A
   • Power Dissipation (P_D): 890W
   • On-Resistance (R_DS(ON)MAX): 330mΩ
     
     

2. Features:

   • Fast Switching
   • Improved ESD Capability
   • Low Gate Charge
   • Low Reverse Transfer Capacitance
   • 100% Single Pulse Avalanche Energy Test
     
     

3. Applications:

   • Power Switch Circuit
     
     

4. Absolute Maximum Ratings (at 25℃):

   • Drain-to-Source Voltage: 1000V
   • Gate-to-Source Voltage: ±40V
   • Single Pulse Avalanche Energy: 5000mJ
   • Operating Junction and Storage Temperature Range: -55 to 150℃
     
     

5. Thermal Characteristics:

   • Thermal Resistance, Junction-to-Case (R_thJC): 0.14℃/W
   • Thermal Resistance, Case to Heatsink (R_thcs): 0.05℃/W
     
     

6. Electrical Characteristics:

   • Drain-to-Source Breakdown Voltage: 1000V
   • Drain-to-Source Leakage Current: Max 1.0µA (at 25℃)
     
     

7. Dynamic Characteristics:

   • Input Capacitance (C_iss): 13nF
   • Output Capacitance (C_oss): 1050pF
   • Reverse Transfer Capacitance (C_rss): 250pF
     
     

8. Switching Characteristics:

   • Turn-on Delay Time (t_d(ON)): 30ns
   • Rise Time (t_r): 30ns
   • Turn-Off Delay Time (t_d(OFF)): 60ns
   • Fall Time (t_f): 35ns
     
     

9. Source-Drain Diode Characteristics:

   • Continuous Source Current (I_SD): 38A
   • Maximum Pulsed Current (I_SM): 152A
   • Diode Forward Voltage (V_SD): 1.5V
     
     

CAFN38N100A Silicon N-Channel Power MOSFET is suitable for various power switch circuits, aiming to enhance system miniaturization and efficiency. It is packaged in SOT-227B form, compliant with RoHS standards.