FZ1600R17KF6C-B2 IGBT Module
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Product details
FZ1600R17KF6C-B2 IGBT Module
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Product Overview:
- Model: FZ1600R17KF6C-B2
- Type: 1700V IGBT module with low-loss IGBT of the second generation and soft emitter-controlled diode.
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Maximum Rated Values:
- Collector-Emitter Voltage (VCES): 1700V
- Continuous DC Collector Current (IC nom): 1600A (TC = 80°C, Tvj max = 150°C), 2600A (TC = 25°C, Tvj max = 150°C)
- Repetitive Peak Collector Current (ICRM): 3200A
- Total Power Dissipation (Ptot): 12.5kW (TC = 25°C, Tvj max = 150°C)
- Gate-Emitter Peak Voltage (VGES): ±20V
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Characteristic Values:
- Collector-Emitter Saturation Voltage (VCE sat): 2.60V (typical, IC = 1600A, VGE = 15V, Tvj = 25°C), 3.10V (maximum, Tvj = 125°C)
- Gate Threshold Voltage (VGEth): 4.5V (minimum), 5.5V (typical), 6.5V (maximum)
- Gate Charge (QG): 19.0µC
- Internal Gate Resistor (RGint): 0.66Ω
- Input Capacitance (Cies): 105nF
- Reverse Transfer Capacitance (Cres): 5.30nF
- Collector-Emitter Cut-off Current (ICES): 0.04mA (minimum), 3.0mA (maximum)
- Gate-Emitter Leakage Current (IGES): 400nA
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Dynamic Characteristics:
- Turn-on Delay Time (td on): 0.30µs
- Rise Time (tr): 0.19µs
- Turn-off Delay Time (td off): 1.20µs
- Fall Time (tf): 0.15µs (Tvj = 25°C), 0.16µs (Tvj = 125°C)
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Energy Loss:
- Turn-on Energy Loss (Eon): 430mJ
- Turn-off Energy Loss (Eoff): 670mJ
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Short Circuit Behavior:
- Short Circuit Current (ISC): 6400A (Tvj = 125°C, tP ≤ 10 µs)
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