CA15mR120S SiC N-MOSFET

1. Key Parameters:

   • Drain-Source Voltage (V_DS): 1200V
   • On-Resistance (R_DS(on)): 15mΩ
   • Continuous Drain Current (I_D): 125A
     
     

2. Features:

   • High blocking voltage with low on-resistance
   • High-speed switching with low capacitances
   • Avalanche ruggedness
     
     

3. Applications:

   • Solar inverters
   • Switch mode power supplies
   • High voltage DC-DC converters
   • Battery chargers
     
     

4. Absolute Maximum Ratings:

   • Gate-Source Voltage (V_GSmax): -8/ 22V
   • Operating Junction and Storage Temperature Range: -40 to 175℃
   • Power Dissipation (P_tot): 681W
     
     

5. Thermal Characteristics:

   • Thermal Resistance, Junction-to-Case (R_thJC): 0.22℃/W
     
     

6. Electrical Characteristics (at 25℃):

   • Drain-Source Breakdown Voltage (BVDSS): 1200V
   • Gate Threshold Voltage (V_GS(th)): 4V
   • Drain-Source On-State Resistance (R_DS(on)): Typical 15mΩ
     
     

7. Dynamic Characteristics:

   • Input Capacitance (C_iss): 4508pF
   • Output Capacitance (C_oss): 222pF
   • Reverse Transfer Capacitance (C_rss): 26pF
   • Total Gate Charge (Q_G): 214nC
     
     

8. Body Diode Characteristics:

   • Forward Voltage (V_SD): Typical 3.9V
   • Reverse Recovery Time (t_rr): 77.6ns
     
     

9. Typical Performance Characteristics:

   • Includes output characteristics, R_DS(on) vs. temperature, transfer characteristics, body diode characteristics, etc.
     
     

CA15mR120S SiC N-MOSFET made by Greegoo is suitable for high-efficiency and high-reliability power electronics applications, with a package form of SOT227.