Power FET module VMO580-02F

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HipPerFET Module VMO580-02F 200V 580A 3.8m N-Channel Enhancement mode
HipPerFET Module VMO580-02F 200V 580A 3.8m N-Channel Enhancement mode
Product details

Power FET module VMO580-02F

Features

• HiperFET technology

- low RDSon

- dv/dt ruggedness

- fast intrinsic reverse diode

• Package

- low inductive current path

- screw connection to high current

Main terminals

- use of non interchangeable connectors for auxiliary terminals possible

- Kelvin source terminals for easy drive

- isolated ceramic base plate

Applications

• converters with high power density for

- main and auxiliary AC drives of electric vehicles

- DC drives

- power supplies

Preliminary Data

VMO580-02F

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