Power FET module VMO580-02F
Home Products SOT-227 Semiconductor DevicePower MOSFET modulePower FET module VMO580-02F
Power FET module VMO580-02F
Features
• HiperFET technology
- low RDSon
- dv/dt ruggedness
- fast intrinsic reverse diode
• Package
- low inductive current path
- screw connection to high current
Main terminals
- use of non interchangeable connectors for auxiliary terminals possible
- Kelvin source terminals for easy drive
- isolated ceramic base plate
Applications
• converters with high power density for
- main and auxiliary AC drives of electric vehicles
- DC drives
- power supplies

Need more information?
Contact us to request pricing, availability and customization options.

CA15mR120S SiC N-MOSFET
125A 1200V
CAFN38N100A Silicon N-Channel Power MOSFET
38A 1000V
CA60MR50P Silicon N-Channel Power MOSFET Integrated FRD
90A 500V
Silicon N-Channel Power MOSFET
The silicon N-channel Enhanced VDMOSFET is manufactured using self-aligned planar technology



