CA60MR50P Silicon N-Channel Power MOSFET Integrated FRD

1. Key Parameters:

   • Drain-to-Source Voltage (V_DSS): 500V
   • Continuous Drain Current (I_D): 90A
   • Power Dissipation (P_D): 1040W
   • On-Resistance (R_DS(ON)TYPE): 47mΩ
     
     

2. Features:

   • Fast Switching
   • Fast Intrinsic Rectifier
   • Low Gate Charge
   • Low Reverse Transfer Capacitance
   • 100% Single Pulse Avalanche Energy Test
     
     

3. Applications:

   • Power switch circuit of PC power supply
     
     

4. Absolute Maximum Ratings (at 25℃):

   • Drain-to-Source Voltage: 500V
   • Gate-to-Source Voltage: ±30V
   • Single Pulse Avalanche Energy: 6000mJ
   • Operating Junction and Storage Temperature Range: -55 to 150℃
     
     

5. Thermal Characteristics:

   • Thermal Resistance, Junction-to-Case (R_θJC): 0.12℃/W
   • Thermal Resistance, Case to Heatsink (R_θJCS): 0.05℃/W
     
     

6. Electrical Characteristics:

   • Drain-to-Source Breakdown Voltage: 500V
   • Drain-to-Source Leakage Current: Max 10µA (at 25℃)
     
     

7. Dynamic Characteristics:

   • Input Capacitance (C_iss): 16720pF
   • Output Capacitance (C_oss): 1250pF
   • Reverse Transfer Capacitance (C_rss): 160pF
     
     

8. Switching Characteristics:

   • Turn-on Delay Time (t_d(ON)): 36ns
   • Rise Time (t_r): 15ns
   • Turn-Off Delay Time (t_d(OFF)): 75ns
   • Fall Time (t_f): 15ns
     
     

9. Source-Drain Diode Characteristics:

   • Continuous Source Current (I_SD): 90A
   • Maximum Pulsed Current (I_SM): 360A
   • Diode Forward Voltage (V_SD): 1.5V
     
     

CA60MR50P Silicon N-Channel Power MOSFET Integrated FRD made by Greegoo is suitable for various power switch circuits, aiming to enhance system miniaturization and efficiency. It is packaged in SOT-227B form, compliant with RoHS standards.