FN100N20 Mosfet Power Module

1. Key Parameters:

   • Drain-to-Source Voltage (VDSS): 200V
   • Continuous Drain Current (ID): 100A (Tc=25°C)
   • Pulsed Drain Current (IDM): 400A
   • Drain-to-Source On-Resistance (RDS(ON)): Max 15mΩ
   • Gate-to-Source Voltage (VGS): ±20V (Continuous), ±30V (Transient)
   • Single Pulse Avalanche Energy (EAS): 2.0J
   • Isolation Breakdown Voltage (Visol): 2500V AC
     
     

2. Features:

   • High power density
   • Easy to mount
   • Space savings
   • Fast intrinsic rectifier
   • Very short recovery time
   • International standard package
     
     

3. Applications:

   • DC-DC converters
   • DC choppers
   • Pulse generators
   • Switched-mode and resonant-mode power supplies
     
     

4. Absolute Maximum Ratings (at Tc=25°C, unless otherwise specified):

   • Drain-to-Source Voltage (VDSS): 200V
   • Continuous Drain Current (ID): 100A
   • Power Dissipation (PD): 430W
   • Operating Junction and Storage Temperature Range (TJ, TSTG): -55 to 150°C
     
     

5. Thermal Characteristics:

   • Thermal Resistance, Junction-to-Case (Rthjc): 0.2℃/W
   • Thermal Resistance, Case-to-Heatsink (RthCK): 0.05℃/W
     
     

6. Electrical Characteristics (at Tc=25°C, unless otherwise specified):

   • Drain-to-Source Breakdown Voltage (BVDSS): 200V
   • Drain-to-Source Leakage Current (IDSS): Max 5µA (VDS=200V, VGS=0V)
   • Gate-to-Source Leakage Current (IGSS): Max 200nA (VGS=±20V, VDS=0V)
   • Gate Threshold Voltage (VGS(th)): 3.0 to 5.0V
   • Total Gate Charge (Qg): 360nC
     
     

7. Source-Drain Diode Characteristics:

   • Continuous Source Current (ISD): 100A
   • Maximum Pulsed Current (ISM): 400A
   • Diode Forward Voltage (VSD): Max 1.5V
   • Reverse Recovery Time (trr): 300ns
     
     

FN100N20 Mosfet Power Module is manufactured by Greegoo complies with RoHS standards, and is suitable for various power conversion and switching applications.