FZ1600R17KF6C-B2 IGBT Module

1. Product Overview:

   • Model: FZ1600R17KF6C-B2
   • Type: 1700V IGBT module with low-loss IGBT of the second generation and soft emitter-controlled diode.
     
     

2. Maximum Rated Values:

   • Collector-Emitter Voltage (VCES): 1700V
   • Continuous DC Collector Current (IC nom): 1600A (TC = 80°C, Tvj max = 150°C), 2600A (TC = 25°C, Tvj max = 150°C)
   • Repetitive Peak Collector Current (ICRM): 3200A
   • Total Power Dissipation (Ptot): 12.5kW (TC = 25°C, Tvj max = 150°C)
   • Gate-Emitter Peak Voltage (VGES): ±20V
     
     

3. Characteristic Values:

   • Collector-Emitter Saturation Voltage (VCE sat): 2.60V (typical, IC = 1600A, VGE = 15V, Tvj = 25°C), 3.10V (maximum, Tvj = 125°C)
   • Gate Threshold Voltage (VGEth): 4.5V (minimum), 5.5V (typical), 6.5V (maximum)
   • Gate Charge (QG): 19.0µC
   • Internal Gate Resistor (RGint): 0.66Ω
   • Input Capacitance (Cies): 105nF
   • Reverse Transfer Capacitance (Cres): 5.30nF
   • Collector-Emitter Cut-off Current (ICES): 0.04mA (minimum), 3.0mA (maximum)
   • Gate-Emitter Leakage Current (IGES): 400nA
     
     

4. Dynamic Characteristics:

   • Turn-on Delay Time (td on): 0.30µs
   • Rise Time (tr): 0.19µs
   • Turn-off Delay Time (td off): 1.20µs
   • Fall Time (tf): 0.15µs (Tvj = 25°C), 0.16µs (Tvj = 125°C)
     
     

5. Energy Loss:

   • Turn-on Energy Loss (Eon): 430mJ
   • Turn-off Energy Loss (Eoff): 670mJ
     
     

6. Short Circuit Behavior:

   • Short Circuit Current (ISC): 6400A (Tvj = 125°C, tP ≤ 10 µs)