Product details

FF300R12KE3 IGBT Module

The FF300R12KE3 is a high-power Insulated Gate Bipolar Transistor (IGBT) module belongs to the 62mm C-series and utilizes advanced Trench/Fieldstop IGBT3 technology paired with an emitter-controlled high-efficiency freewheeling diode. This module is optimized for demanding inverter applications, such as motor drives, renewable energy systems, and industrial power conversion, offering low conduction losses, high switching efficiency, and robust thermal performance. It features a copper baseplate with Al₂O₃ ceramic isolation for reliable operation in harsh environments.

Key Features

Trench/Fieldstop IGBT3 for reduced switching losses
High-efficiency diode for improved reverse recovery
Basic insulation (IEC 61140 Class 1) with 2.5 kV RMS isolation
Suitable for high-frequency switching up to 10-20 kHz in typical applications

Main Electrical Parameters

Parameter	Symbol	Value	Conditions
Collector-Emitter Voltage	V_CES	1200 V	-
Continuous Collector Current	I_C (nom)	300 A	T_C = 80°C, T_vj max = 150°C
		440 A	T_C = 25°C, T_vj max = 150°C
Repetitive Peak Collector Current	I_CRM	600 A	t_p = 1 ms
Total Power Dissipation	P_tot	1450 W	T_C = 25°C, T_vj max = 150°C
Gate-Emitter Voltage	V_GES	±20 V	-
Junction Temperature Range	T_vj op	-40°C to 125°C	-
Isolation Voltage	V_ISOL	2.5 kV (RMS)	f = 50 Hz, t = 1 min
Collector-Emitter Saturation Voltage	V_CE(sat)	1.70–2.15 V	I_C = 300 A, V_GE = 15 V, T_vj = 25°C
Gate Threshold Voltage	V_GE(th)	5.0–6.5 V	I_C = 12 mA, V_CE = V_GE, T_vj = 25°C
Total Gate Charge	Q_G	2.80 μC	V_GE = -15 V to 15 V
Input Capacitance	C_ies	21.0 nF	f = 1 MHz, V_CE = 25 V, V_GE = 0 V, T_vj = 25°C
Thermal Resistance (Junction-to-Case, per IGBT)	R_thJC	0.085 K/W	-