Product details

FP50R12KT4G IGBT Module

Overview

The FP50R12KT4G is a high-performance IGBT (Insulated Gate Bipolar Transistor) module. It is designed for compact, efficient power conversion in industrial applications. This module integrates a three-phase input rectifier, a six-pack IGBT inverter, and a brake chopper into a single package, enabling reliable operation in demanding environments with fast switching and low losses.

Aplications

Auxiliary inverters in renewable energy systems or industrial power supplies.

Motor drives for pumps, fans, and compressors.

Servo drives in automation and robotics.

Key Features

Key Features

Electrical Design: Utilizes fast Trench/Fieldstop IGBT4 technology with emitter-controlled diodes for low switching losses, low saturation voltage (V_CE,sat), and a positive temperature coefficient for easy paralleling.

Thermal Management: Al₂O₃ substrate with low thermal resistance, high power cycling (up to 10,000 cycles) and thermal cycling capability, copper baseplate, and integrated NTC thermistor for temperature monitoring.

Mechanical Reliability: Solder pin contact technology for low inductance (40 nH stray inductance), isolation voltage of 2.5 kV RMS, RoHS compliant, and standard housing (122 mm x 62 mm, 300 g weight).

Operational Range: Junction temperature (T_vj,op) up to 150°C, storage temperature -40°C to 125°C.

Main Parameters

Parameter	Symbol	Value (IGBT Inverter, per IGBT)	Value (Diode Rectifier, per Diode)	Value (Brake Chopper IGBT, per IGBT)	Notes
Collector-Emitter Voltage	V_CES / V_RRM	1200 V	1600 V	1200 V	T_vj = 25°C
Nominal DC Current	I_CDC / I_F	50 A	70 A (RMS input)	25 A	T_vj max = 175°C, T_C = 95–100°C
Repetitive Peak Current	I_CRM / I_FRM	100 A	450 A (FSM, 10 ms)	50 A	-
Saturation Voltage	V_CE,sat / V_F	1.85–2.15 V (25°C); 2.25 V (150°C)	-	1.85–2.15 V (25°C); 2.25 V (150°C)	I_C = 50 A, V_GE = 15 V
Gate Threshold Voltage	V_GE,th	5.20–6.40 V	-	5.20–6.40 V	I_C = 1.7 mA, T_vj = 25°C
Total Gate Charge	Q_G	0.38 μC	-	0.2 μC	V_GE = ±15 V
Turn-On Delay Time	t_d,on	0.060 μs (25°C)	-	0.050 μs (25°C)	Inductive load, V_CC = 600 V
Turn-Off Delay Time	t_d,off	0.280 μs (25°C)	-	0.210 μs (25°C)	-
Turn-On Energy	E_on	3.5 mJ (25°C)	-	2.2 mJ (25°C)	-
Turn-Off Energy	E_off	2.8 mJ (25°C)	-	1.4 mJ (25°C)	-
Short-Circuit Current	I_SC	180 A	-	90 A	t_p ≤ 10 μs, T_vj = 125–150°C
Thermal Resistance (Junction-to-Case)	R_thJC	0.540 K/W	0.850 K/W	0.950 K/W	Per device, λ grease = 1 W/(m·K)
NTC Resistance at 25°C	R_25	-	-	-	5 kΩ (integrated thermistor)