FF1200R17KP4-B2 IGBT Module

The FF1200R17KP4-B2 is a high-power IGBT (Insulated Gate Bipolar Transistor) module, it's designed for demanding medium-voltage applications. It features a half-bridge configuration with integrated freewheeling diodes, optimized for high-frequency switching with low losses, making it ideal for efficient power conversion in industrial systems.

Function

It serves as a robust switch for converting DC to AC power, supporting PWM control for variable speed drives and inverters, combining MOSFET-like ease of control with bipolar transistor efficiency.

High Voltage Rating: 1700V collector-emitter voltage (V_CES) for medium-voltage use.

High Current Capacity: 1200A continuous collector current (I_C) at T_c = 25°C.

Low Switching Losses: Optimized IGBT4 technology with fast turn-on/turn-off times (t_on/t_off ~200ns).

Integrated Diodes: Built-in antiparallel diodes for freewheeling.

Thermal Management: Aluminum nitride substrate and phase-change material for superior heat dissipation.

Robust Packaging: PrimePACK 2 housing with 6kV isolation and RoHS compliance.

Medium-Voltage Drives: Motor control in industrial automation.

Renewable Energy: Solar and wind inverters for grid-tied systems.

Traction and EV: Electric vehicle charging and railway propulsion.

Power Supplies: UPS and high-power converters.