CAFN230N20 Silicon N-Channel Power MOSFET

1. Key Parameters:

   • Drain-to-Source Voltage (V_DSS): 200V
   • Continuous Drain Current (I_D): 210A
   • Power Dissipation (P_D): 1070W
   • On-Resistance (R_DS(ON)TYPE): 10mΩ
     
     

2. Features:

   • Fast Switching
   • Improved ESD Capability
   • Low Gate Charge
   • Low Reverse Transfer Capacitance
   • 100% Single Pulse Avalanche Energy Test
     
     

3. Applications:

   • Power Switch Circuit
     
     

4. Absolute Maximum Ratings (at 25℃):

   • Drain-to-Source Voltage: 200V
   • Gate-to-Source Voltage: ±30V
   • Single Pulse Avalanche Energy: 4.5J
   • Operating Junction and Storage Temperature Range: -55 to 150℃
     
     

5. Thermal Characteristics:

   • Thermal Resistance, Junction-to-Case (R_θJC): 0.12℃/W
   • Thermal Resistance, Junction-to-Ambient (R_θJA): 0.05℃/W
     
     

6. Electrical Characteristics:

   • Drain-to-Source Breakdown Voltage: 200V
   • Drain-to-Source Leakage Current: Max 10µA (at 25℃)
     
     

7. Dynamic Characteristics:

   • Input Capacitance (C_iss): 16000pF
   • Output Capacitance (C_oss): 1720pF
   • Reverse Transfer Capacitance (C_rss): 210pF
     
     

8. Switching Characteristics:

   • Turn-on Delay Time (t_d(ON)): 95ns
   • Rise Time (t_r): 54ns
   • Turn-Off Delay Time (t_d(OFF)): 261ns
   • Fall Time (t_f): 41ns
     
     

9. Source-Drain Diode Characteristics:

   • Continuous Source Current (I_SD): 210A
   • Maximum Pulsed Current (I_SM): 800A
   • Diode Forward Voltage (V_SD): 1.5V
     
     

CAFN230N20 Silicon N-Channel Power MOSFET is suitable for various power switch circuits, aiming to enhance system miniaturization and efficiency. It is packaged in SOT-227B form, compliant with RoHS standards.