FN60N80 Silicon N-channel Enhanced MOSFET

1. Key Parameters:

   • Drain-to-Source Voltage (VDSS): 800V
   • Continuous Drain Current (ID): 60A (Tc=25°C), 40A (Tc=100°C)
   • Drain-to-Source On-Resistance (RDS(ON)): Max 140mΩ
   • Gate-to-Source Voltage (VGS): ±40V
   • Single Pulse Avalanche Energy (EAS): 800mJ
     
     

2. Features:

   • Fast Switching
   • Improved ESD Capability
   • Low Gate Charge
   • Low Reverse Transfer Capacitance
   • 100% Single Pulse Avalanche Energy Test
     
     

3. Applications:

   • Power Switch Circuit
     
     

4. Absolute Maximum Ratings (at Tc=25°C, unless otherwise specified):

   • Drain-to-Source Voltage (VDSS): 800V
   • Continuous Drain Current (ID): 60A
   • Pulsed Drain Current (IDM): 240A
   • Power Dissipation (PD): 700W
   • Operating Junction and Storage Temperature Range (TJ, Tstg): -55 to 150°C
     
     

5. Thermal Characteristics:

   • Thermal Resistance, Junction-to-Case (RthJC): 0.17℃/W
   • Thermal Resistance, Case to Heatsink (Rthcs): 0.05℃/W
     
     

6. Electrical Characteristics (at Tc=25°C, unless otherwise specified):

   • Drain-to-Source Breakdown Voltage (VDSS): 800V
   • Drain-to-Source Leakage Current (IDSS): Max 50µA (VDS=800V, VGS=0V, Ta=25°C)
   • Gate-to-Source Forward Leakage (IGSS(F)): Max 200nA (VGS= 30V)
   • Gate-to-Source Reverse Leakage (IGSS(R)): Max -200nA (VGS=-30V)
     
     

7. Dynamic Characteristics:

   • Input Capacitance (Ciss): 2600pF
   • Output Capacitance (Coss): 760pF
   • Reverse Transfer Capacitance (Crss): 50pF
   • Total Gate Charge (Qg): 60nC
     
     

8. Source-Drain Diode Characteristics:

   • Continuous Source Current (ISD): 60A
   • Maximum Pulsed Current (ISM): 240A
   • Diode Forward Voltage (VSD): Max 1.5V
     
     

FN60N80 Silicon N-channel Enhanced VD MOSFET is made using advanced trench gate super junction technology, designed to reduce conduction loss, improve switching performance, and enhance avalanche energy. It is suitable for various power switching circuits to achieve system miniaturization and higher efficiency.