Single IGBT switch

TYPE

Collector

Emmiter

Voltage

CD 

collect 
current

Gate-

emitter 
voltage

Power

dissipation

Tc=25℃

Diode thermal

resistance,
junction

case   MAX

Collector

emitter

saturation

voltage

Gate-emitter 
threshold  
voltage

Diode

forward

voltage

VCE

Ic

GE

Ptot

Rthjc

VCEsat

VGE(th)

VF

(V)

(A)

(V)

(W)

(℃/W)

(V)

(V)

(V)

H15N120F1

1200

15

±20

333

0.42

1.75

4.2  -6.2

1.05

H20N135F1

1350

20

±20

333

0.45

1.56

4.2  -6.2

1.05

H25N135F1

1350

25

±20

333

0.45

1.65

4.2  -6.2

1.15

W15N120F1

1200

15

±20

350

0.42

1.75

4.8  -6.8

1.65

W25N120F1

1200

25

±20

333

0.45

1.75

4.8  -6.8

1.65

W40N120F1

1200

40

±20

350

0.42

1.75

4.8  -6.8

3.50

W40N120F2

1200

40

±20

350

0.42

1.75

4.8  -6.8

3.50

W60N065F1

650

60

±30

450

0.27

1.90

4.0  -6.0

3.50

TYPE

Collector

Emmiter

Voltage

CD

collect

current

Power

Diode 
thermal resistance,

Collector-

emitter

saturation

voltage

Diode

forward

voltage

VCE

Ic

VGE

Ptot

Rthjc

VCEsat

VGE(th)

VF

(V)

(A)

(V)

(W)

(℃/W)

(V)

(V)

(V)

W40N120F1D

1200

40

±20

350

0.42

1.75

4.8-6.8

3.50

W40N120F2D

1200

40

±20

350

0.42

1.75

4.8-6.8

3.50

650

60

±30

450

0.27

1.90

4.0 -6.0

3.50