CASBD2X101-12-CASBD2X100-12 Dual Silicon Carbide Schottky Barrier Diode
Home Products SOT-227B SOT-227 PackageSchottky DiodeCASBD2X101-12-CASBD2X100-12 Dual Silicon Carbide Schottky Barrier Diode
CASBD2X101-12-CASBD2X100-12 Dual Silicon Carbide Schottky Barrier Diode
The Silicon Carbide (SiC) power Schottky Barrier Diode (SBD) product line from Microsemi increases performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The CASBD2X101-12 and CASBD2X100-12 are dual 1200V, 100A SiC SBD devices in an SOT-227 package.
Features
The following are key features of the CASBD2X101-12and CASBD2X100-12devices: •
No reverse recovery
•Low forward voltage
•Low leakage current
•Avalanche-energy rated
•RoHS compliant
•Isolated voltage to 2500 V
Benefits
The following are benefits of the CASBD2X101-12and CASBD2X100-12devices:
•High switching frequency
•Low switching losses
•Low noise (EMI) switching
•Higher reliability systems
•Increased system power density
•Direct mounting to the heat sink (isolated package)
Applications
The CASBD2X101-12and CASBD2X100-12devices are designed for the following applications: •
•Power factor correction (PFC)
•Anti-parallel diode
•Switch-mode power supply
•Inverters/converters
•Motor controllers
•Freewheeling diode
•Switch-mode power supply
•Inverters/converters
•Snubber/clamp diode
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